Avalanche-induced 1/f noise in bipolar transistors
- 1 February 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 17 (2) , 134-136
- https://doi.org/10.1109/T-ED.1970.16938
Abstract
It has been proposed that degradation of low current hFE, as a result of avalanching the emitter-base junction of a bipolar transistor, can be attributed to an increase in surface recombination velocity within the emitter-base space-charge region. This work shows that 1/fnoise is also increased during avalanche and that this increase is consistent with a previously reported correlation between surface recombination velocity and 1/fnoise.Keywords
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