Diagnosis of Surface Stability of 80K-Phase BiSrCaCuO Single Crystals with and without Li Doping
- 1 September 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (9R)
- https://doi.org/10.1143/jjap.30.1975
Abstract
The surface structure of 80 K-phase BiSrCaCuO single crystals with and without Li doping has been studied using low-energy electron diffraction (LEED) at elevated temperatures. Although the superconducting critical temperature rises slightly with Li doping, the cleaved surface becomes amorphous in vacuum at temperature ∼100 degrees lower than that of the undoped sample (600°C).Keywords
This publication has 4 references indexed in Scilit:
- Epitaxial Growth of SrxTiOy and Fabrication of EuBa2Cu3O7-δ/SrxTiOy/Pb Tunnel JunctionsJapanese Journal of Applied Physics, 1991
- Epitaxial Growth of MgO Layer on Y1Ba2Cu3O7-y Thin FilmJapanese Journal of Applied Physics, 1990
- Tunneling measurements on superconductor/insulator/superconductor junctions using single-crystal YBa2Cu3O7−x thin filmsApplied Physics Letters, 1990
- Surface structural and electronic properties of cleaved single crystals of compounds: A scanning tunneling microscopy studyPhysical Review B, 1989