Electric Forming in $n$ -Germanium Transistors Using Phosphorus-Alloy Contacts

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1 July 1951

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 83 (1) , 165
https://doi.org/10.1103/physrev.83.165

Abstract

DOI: https://doi.org/10.1103/PhysRev.83.165

Keywords

This publication has 2 references indexed in Scilit:

Significance of Composition of Contact Point in Rectifying Junctions on Germanium
Physical Review B, 1951
Effects of Electrical Forming on the Rectifying Barriers of $n$ - and $p$ -Germanium Transistors
Physical Review B, 1950