Investigation of effect of strain onlow-threshold 1.3 µm InGaAsP strained-layerquantum well lasers
- 12 May 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (10) , 788-789
- https://doi.org/10.1049/el:19940560
Abstract
The authors have investigated the effect of strain on 1.3 µm InGaAsP lasers under the same well thickness (6 nm) and same lasing wavelength (1.34 µm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23 meV), and minimum threshold current density (450 A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3 mA) was also achieved in a 90–70% coated 200 µm-long device.Keywords
This publication has 3 references indexed in Scilit:
- Low-threshold (3.2 mA per element) 1.3 mu m InGaAsP MQW laser array on a p-type substrateIEEE Photonics Technology Letters, 1992
- Low threshold 1.5 μm tensile-strained single quantum well lasersElectronics Letters, 1991
- High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiersIEEE Journal of Quantum Electronics, 1991