Photon Drag Effect in Germanium
- 1 November 1972
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 11 (11) , 1663
- https://doi.org/10.1143/jjap.11.1663
Abstract
It is described how the photon drag voltage in germanium varies with hole concentration and how it depends on temperature. Also some considerations are taken into the following additional contributions similar to the photon drag effect: (1) the Thomson effect, (2) the hot carrier effect and (3) the diffusion effect. Experiments were performed by using a Q-switched CO2laser. This photon drag effect provides a convenient detector for use with Q-switched CO2lasers and mode-locked CO2lasers, because it operates with the high speed response time smaller than 10-10s at room temperature. In the case ofp-type germanium with the resistivity of 2.3 Ω-cm and the size of 1.5×1.5×20 mm3, its responsivity (R) is 3×10-6(V/W) and the detectivity (D) is 1.4×103(W-1) at room temperature and 1.1×104(W-1) at 77 K.Keywords
This publication has 4 references indexed in Scilit:
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- PHOTON DRAG IN GERMANIUMApplied Physics Letters, 1970
- Energy band structure in p-type germanium and siliconJournal of Physics and Chemistry of Solids, 1956
- Infrared Absorption in-Type GermaniumPhysical Review B, 1953