Hot-electron drift mobility in silicon between 77 °K and 300 °K
- 1 March 1968
- journal article
- Published by Springer Nature in Il Nuovo Cimento B (1971-1996)
- Vol. 54 (1) , 169-175
- https://doi.org/10.1007/bf02711540
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Hot-carrier drift velocity in siliconIl Nuovo Cimento B (1971-1996), 1967
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967
- Hot-Electron Emission From ShallowJunctions is SiliconPhysical Review B, 1963
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- The influence of interelectronic collisions on conduction and breakdown in covalent semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- Scattering of Electrons by Lattice Vibrations in Nonpolar CrystalsPhysical Review B, 1956
- Dielectric Breakdown in SolidsProceedings of the Physical Society. Section B, 1956