RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et₂Ga - PEt₂]₃ AS ONLY SOURCE

1 October 1982

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 43 (C1) , C1-347
https://doi.org/10.1051/jphyscol:1982146

Abstract

Growth of polycrystalline GaP layers has been obtained between 650 and 775°C, by low pressure metalorganic chemical vapor deposition, using the only molecule [Et2Ga-PEt2]3 as element source. The disorder has been characterized by Raman spectroscopy

Keywords

RAMAN SPECTROSCOPY
THIN FILM

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RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et2Ga - PEt2]3 AS ONLY SOURCE

Abstract

Keywords

RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et₂Ga - PEt₂]₃ AS ONLY SOURCE