Role of the band structure in determining the third-order susceptibility of semiconductor superlattices
- 15 May 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (19) , 11031-11035
- https://doi.org/10.1103/physrevb.45.11031
Abstract
We show that both the absolute value and the sharp features in the spectral form of the frequency-dependent third-order susceptibility of semiconductor superlattices (e.g., [8 monolayers (InAs(GaSb]/(4 monolayers AlSb)) strongly depend on the shape of the minibands. The significant minibands span a range of energies up to ≊ from the fundamental band edges.
Keywords
This publication has 9 references indexed in Scilit:
- Virtual optical nonlinearity in GaAs–AlAs superlatticesOptics Letters, 1991
- Blue Stark shifts in (InAs)1−x(GaSb)x-AlSb superlatticesApplied Physics Letters, 1991
- Theory of band-edge optical nonlinearities in type-I and type-II quantum-well structuresPhysical Review B, 1991
- Linear and nonlinear optical properties of (GaAs/(AlAssuperlatticesPhysical Review B, 1991
- Electronic structure, effective masses and optical properties of perfect and imperfect HgTe-Hg1-xCdxTe and HgTe-Zn1-yCdyTe superlatticesSemiconductor Science and Technology, 1990
- Microscopic theory of enhanced nonlinear refraction in semiconductor superlatticesPhysical Review B, 1990
- The Elements of Nonlinear OpticsPublished by Cambridge University Press (CUP) ,1990
- Band structure engineering of a nonlinear optical response in semiconductor superlatticesJournal of Physics: Condensed Matter, 1990
- Femtosecond ac Stark effect in semiconductor quantum wells: Extreme low- and high-intensity limitsPhysical Review Letters, 1989