Very low driving-voltage InGaAlAs/InAlAs electroabsorption modulators operating at 40 Gbit/s
- 17 February 2005
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 41 (4) , 211-212
- https://doi.org/10.1049/el:20057992
Abstract
A 40 Gbit/s electroabsorption modulator driven by a peak-to-peak voltage as low as 0.79 V has been successfully fabricated. This device showed a 3 dB E/O bandwidth of 46 GHz and a return loss of below −10 dB even at 50 GHz. These excellent characteristics were achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well (MQW) layers with excellent extinction characteristics and by maximising the 3 dB bandwidth, which was achieved by reducing MQW core width and using a polyimide-buried device structure with a low-loss microwave feed line.Keywords
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