Direct evidence of doppler shift in 10 keV Ar+ ion induced Si Auger emission
- 1 February 1989
- journal article
- letter
- Published by Elsevier in Surface Science
- Vol. 209 (1-2) , L133-L137
- https://doi.org/10.1016/0039-6028(89)90054-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Low-energy ion induced Auger electron spectra and energy thresholds for some pure elements, compounds, and alloysJournal of Vacuum Science & Technology A, 1987
- Angle-resolved auger electron spectra induced by neon ion impact on aluminumSurface Science, 1986
- Observation of a new atomic-like peak in the ion-induced Auger spectrum of SiSurface Science, 1986
- Ion bombardment induced photon and Auger emission for surface analysisVacuum, 1984
- Auger spectra induced by Ne+ and Ar+ impact on Mg, Al, and SiJournal of Applied Physics, 1984
- Ion-Induced Auger Electron Emission from Si SurfaceJapanese Journal of Applied Physics, 1982
- Characteristics of ion-excited silicon L-shell Auger spectraSurface Science, 1979