Gallium implantation induced deep levels in n-type 6H–SIC
- 1 January 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (1) , 105-107
- https://doi.org/10.1063/1.369428
Abstract
Two Ga-acceptor levels, located at EV+0.31 eV and EV+0.37 eV, respectively, have been observed in the gallium implantation manufactured p+n diodes using deep level transient spectroscopy. The behavior of the implanted gallium is very similar to that of implanted aluminum, except that the positions of the introduced levels are different. This result strongly supports the recent model, which was used to explain the discrepant results between boron and aluminum implantation induced deep levels. Besides the two acceptor levels, a thermally stable electron trap is also observed and has been tentatively attributed to a Ga-related complex.This publication has 8 references indexed in Scilit:
- Aluminum-implantation-induced deep levels in n-type 6H–SiCJournal of Applied Physics, 1998
- Deep level traps in the extended tail region of boron-implanted n-type 6H–SiCApplied Physics Letters, 1998
- Electronic structure of the deep boron acceptor in boron-doped-SiCPhysical Review B, 1998
- Boron acceptor levels in 6H-SiC bulk samplesApplied Physics Letters, 1997
- Doping of SiC by Implantation of Boron and AluminumPhysica Status Solidi (a), 1997
- A simple and inexpensive circuit for emission and capture deep level transient spectroscopyReview of Scientific Instruments, 1996
- Annealing of implantation damage and redistribution of impurities in SiC using a pulsed excimer laserApplied Physics Letters, 1990
- Site effect on the impurity levels in,, andSiCPhysical Review B, 1980