A calculation of the electronic response function in 2H-NbSe2including electron-phonon matrix element effects
- 24 December 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (24) , L959-L962
- https://doi.org/10.1088/0022-3719/11/24/005
Abstract
The electronic response including electron-phonon matrix elements in a simple tight-binding model is calculated for the 'dz2' sub-band in 2H-NbSe2. This function, in contrast to the bare response, shows a peak in the region of the charge density wave (CDW) wavevector. It is therefore concluded that the CDW is driven not simply by Fermi surface nesting but rather by a combination of matrix element effects and weak nesting.Keywords
This publication has 6 references indexed in Scilit:
- The electronic susceptibility and charge density waves in 2H layer compoundsJournal of Physics C: Solid State Physics, 1978
- A tight binding fit to the bandstructure of 2H-NbSe2and NbS2Journal of Physics C: Solid State Physics, 1978
- Phonon Dispersion in Transition MetalsPhysical Review Letters, 1977
- Neutron scattering study of the charge-density wave transitions in andPhysical Review B, 1977
- Charge-density waves and superlattices in the metallic layered transition metal dichalcogenidesAdvances in Physics, 1975
- Tight Binding and Transition-Metal SuperconductivityPhysical Review Letters, 1970