Phase transitions in two dimensions - the case of Sn adsorbed on Ge(111) surfaces
Preprint
- 20 September 1999
Abstract
Accurate atomic coordinates of the room-temperature (root3xroot3)R30degree and low-temperature (3x3) phases of 1/3 ML Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are located solely at T4-sites in the (root3xroot3)R30degree structure. In the low temperature phase one of the three Sn atoms per (3x3) unit cell is displaced outwards by 0.26 +/- 0.04 A relative to the other two. This displacement is accompanied by an increase in the first to second double-layer spacing in the Ge substrate.Keywords
All Related Versions
- Version 1, 1999-09-20, ArXiv
- Published version: Physical Review Letters, 83 (11), 2226.
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