AlGaAs/GaAs pnp heterojunction bipolar transistor with carbon-doped collector and emitter grown by atomic layer epitaxy

25 April 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (9) , 692-693
https://doi.org/10.1049/el:19910431

Abstract

The first AlGaAs/GaAs pnp heterojunction bipolar transistor (HBT) grown entirely by atomic layer epitaxy (ALE) is reported. Carbon was used as the p-type dopant in the emitter and collector. The use of carbon, with its low diffusivity and the potential for very heavy doping, will lead to reduced emitter and collector resistances in a pnp structure. For the devices reported here, a common emitter current gain over 100 was obtained, with good I/V characteristics.

Keywords

I/V CHARACTERISTICS
ALE
ALGAAS-GAAS:PC
PNP STRUCTURE
HBT
PNP TRANSISTORS
COMMON EMITTER CURRENT GAIN
ATOMIC LAYER EPITAXY
SEMICONDUCTORS

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