Formation of Metal Nitrides by Nitrogen Implantation
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A systematic study was performed to investigate the ion beam induced metal nitride formation by direct nitrogen implantation into 10 selected metals, either of thin film or bulk material. An X-ray diffractometer, together with a specially-designed Seemann-Bohlin attachment, was employed to provide fast and reliable phase identification in the thin implanted layer. The results show that room temperature nitrogen implantation can lead to the formation of many, but not all, of the equilibrium metal nitrides. The formation of metal nitrides by implantation is discussed in terms of the thermodynamic condition and the readiness of structural trans format ion.Keywords
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