Fabrication of GaAlAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

26 April 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (9) , 383-384
https://doi.org/10.1049/el:19840265

Abstract

By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.

Keywords

MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS
WINDOW STRIP
GAAS-ALGAAS
III-V SEMICONDUCTORS
OUTPUT POWER
ZN-DIFFUSION INDUCED ALLOYING

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