Ultrabroadband terahertz field detection by proton-bombarded InP photoconductive antennas

1 January 2004

journal article
Published by Optica Publishing Group in Optics Express

Vol. 12 (13) , 2954-2959
https://doi.org/10.1364/opex.12.002954

Abstract

Photoconductive (PC) antennas fabricated on InP bombarded with 180 keV protons of different dosages (InP:H⁺) all exhibit a useful bandwidth of about 30 THz, comparable to that of the LT-GaAs PC antenna. The peak signal current of the best InP: H⁺ device (dosage of 10¹⁵ ions/cm²) is slightly higher than that of the LT-GaAs one, while the signal-to-noise ratio (SNR) of the former is about half of that of the latter due to lower resistivity. This suggests that InP: H⁺ can be a good substrate for THz PC antennas with proper annealing and/or implantation recipe.

Keywords

FEMTOSECOND LASERS
FOURIER TRANSFORMS
FUSED SILICA
HIGH POWER LASERS
LIGHT BEAMS
PARABOLIC MIRRORS

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