Growth Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh Vacuum Rapid Thermal Chemical Vapor Deposition Reactor
- 1 November 1994
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 141 (11) , 3269-3273
- https://doi.org/10.1149/1.2059317
Abstract
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