InGaN/AlGaN blue-light-emitting diodes
- 1 May 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 13 (3) , 705-710
- https://doi.org/10.1116/1.579811
Abstract
Highly efficient InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes(LEDs) with an external quantum efficiency of 5.4% were fabricated by codoping Zn and Si into an InGaN active layer. The output power was as high as 3 mW at a forward current of 20 mA. The peak wavelength and the full width at half maximum of the electroluminescence of blue LEDs were 450 and 70 nm, respectively. Blue‐green LEDs with a brightness of 2 cd and a peak wavelength of 500 nm were fabricated for application to traffic lights by increasing the indium mole fraction of the InGaN active layer.Keywords
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