Effect of the sensor structure on the stability of Ga2O3 sensors for reducing gases
- 1 March 1994
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 18 (1-3) , 119-124
- https://doi.org/10.1016/0925-4005(94)87069-1
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electron mobility in single- and polycrystalline Ga2O3Journal of Applied Physics, 1993
- H2-induced changes in electrical conductance of ?-Ga2O3 thin-film systemsApplied Physics A, 1992
- Characterization and crystallite growth of semiconducting high-temperature-stable Ga2O3 thin filmsJournal of Materials Science Letters, 1992
- Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin filmsSensors and Actuators B: Chemical, 1992
- Oxygen sensing with long-term stable Ga2O3 thin filmsSensors and Actuators B: Chemical, 1991
- Stability of semiconducting gallium oxide thin filmsThin Solid Films, 1990
- Electrical properties of β-Ga2O3 single crystalsSolid State Communications, 1976
- Polymorphism of Ga2O3 and the System Ga2O3—H2OJournal of the American Chemical Society, 1952