High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

17 January 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (2) , 141-142
https://doi.org/10.1049/el:19910092

Abstract

High-performance HBTs with a carbon-doped base layer (p = 4 × 10¹⁹cm⁻³) are reported. The use of carbon as a p-type dopant allows the emitter-base pn junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains h_FE = 50 and f_T and f_max values of 42GHz and 117GHz, respectively, are reported.

Keywords

MOCVD GROWTH
ALGAAS-GAAS:C
117 GHZ
P-TYPE DOPANT
EMITTER-BASE P-N JUNCTION
WAFER EPITAXIAL STRUCTURE
C DOPED BASE LAYER
42 GHZ
MICROWAVE HBT
HETEROJUNCTION BIPOLAR TRANSISTOR

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