Single particle electron light scattering in heavily doped semiconductors

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Abstract
Effects of impurity concentration fluctuations on the single particle light scattering in many‐valley semiconductors are considered. When ql » 1, where q is the light momentum and l is the electron mean free path, the long‐range mean square impurity potential only broadens the edge of the cross‐section at qvF = ω, νF being the Fermi velocity. In the opposite hydrodynamic limit ql « 1 the effects of the short‐range impurity fluctuation potential create the spectrum of Lorentzian shape. The integral cross‐section in this case is independent of the incident light frequency. The selection rules do not depend on the light momentum q.