Picosecond surface-emitting semiconductor laserwith> 200 mW average power
- 7 June 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (12) , 766-767
- https://doi.org/10.1049/el:20010546
Abstract
A passively modelocked diode-pumped surface-emitting semiconductor laser at 950 nm with a 2 GHz repetition rate is reported. Compared to the first device of this kind, which the authors recently reported, a greatly improved average output power of 213 mW and a reduced pulse duration of 3.2 ps are achieved. The device consists of an optically pumped semiconductor gain structure and a semiconductor saturable absorber mirror (SESAM) in an external cavity.Keywords
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