A VSWR-protected silicon bipolar RF power amplifier with soft-slope power control
- 21 March 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 40 (3) , 611-621
- https://doi.org/10.1109/jssc.2005.843634
Abstract
This paper presents the design and measured performance of a 1.8-GHz power amplifier featuring load mismatch protection and soft-slope power control. Load-mismatch-induced breakdown can be avoided by attenuating the RF power to the final stage during overvoltage conditions. This was accomplished by means of a feedback control system, which detects the peak voltage at the output collector node and clamps its value to a given threshold by varying the circuit gain. The issue of output power control has been addressed as well. To this end, a temperature-compensated bias network is proposed, which allows a moderate power control slope (dB/V) to be achieved by varying the circuit quiescent current according to an exponential law. The nonlinear power amplifier was fabricated using a low-cost silicon bipolar process with a 6.4-V breakdown voltage. It delivers a 33.5-dBm saturated output power with 46% maximum power-added efficiency and 36-dB gain at a nominal 3.5-V supply voltage. The device is able to tolerate a 10:1 load standing-wave ratio up to a 5.1-V supply voltage. Power control slope is lower than 80 dB/V between -15 dBm and the saturated output power level.Keywords
This publication has 20 references indexed in Scilit:
- VSWR-protected silicon bipolar power amplifier with smooth power control slopePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- A silicon bipolar technology for high-efficiency power applications up to C-bandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 1.8-GHz high-efficiency 34-dBm silicon bipolar power amplifierIEEE Transactions on Microwave Theory and Techniques, 2002
- A 3.6 V 4 W 0.2cc Si power-MOS-amplifier module for GSM handset phonesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An integrated 2 GHz 500 mW bipolar amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Fully integrated CMOS power amplifier design using the distributed active-transformer architectureIEEE Journal of Solid-State Circuits, 2002
- A 700-MHz 1-W fully differential CMOS class-E power amplifierIEEE Journal of Solid-State Circuits, 2002
- A 3.2-V operation single-chip dual-band AlGaAs/GaAs HBT MMIC power amplifier with active feedback circuit techniqueIEEE Journal of Solid-State Circuits, 2000
- Class-F power amplifiers with maximally flat waveformsIEEE Transactions on Microwave Theory and Techniques, 1997