Silicon migration during the molecular beam epitaxy of delta-doped GaAs and Al0.25Ga0.75As

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Abstract
We have investigated the migration of Si in delta (δ)‐doped GaAs and Al0.25Ga0.75As structures using secondary ion mass spectrometry. The results demonstrate that: (1) the extent of Si migration strongly depends on the substrate temperature T s ; (2) the profiles for the Si δ layers in GaAs are asymmetric and indicate that Si spreads more towards the surface; this effect can be due to surface segregation; (3) the profiles for the Si δ layers in Al0.25Ga0.75As are symmetric and show substantially larger widths than those in GaAs structures (grown at comparable T s ). We attribute this enhancement of the Si migration to the larger diffusivity of Si in Al0.25Ga0.75As.

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