High Burnout Gallium Arsenide Schottky Barrier Diodes

1 January 1972

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/gmtt.1972.1122992

Abstract

This paper discusses the results of a programme to investigate the burnout phenomena of gallium arsenide Schottky barrier mixer diodes with regard to radar system t.r. cell leakage, and describes the performance of X-band high burnout diodes.

Keywords

GALLIUM ARSENIDE
SCHOTTKY BARRIERS
SCHOTTKY DIODES
SEMICONDUCTOR DIODES
ELECTROMAGNETIC HEATING
NOISE FIGURE
TESTING
CONTACTS
MICROWAVE DEVICES
GOLD

This publication has 1 reference indexed in Scilit:

The Development of Gallium Arsenide Schottky Barrier Diodes as Mixers and Detectors
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1969