Pseudo-alloy behavior of InAs-GaAs strained-layer superlattices
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 615-619
- https://doi.org/10.1016/0039-6028(86)90481-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth of a novel InAs-GaAs strained layer superlattice on InPApplied Physics Letters, 1985
- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVDJapanese Journal of Applied Physics, 1984
- A New High-Electron Mobility Monolayer SuperlatticeJapanese Journal of Applied Physics, 1983
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977