Physical significance of scaling factor used in transport expressions of polycrystalline silicon

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Abstract
The letter discusses the physical significance of the scaling factor S used by many workers in mobility and resistivity expressions for polycrystalline silicon to fit experimental data into their theories. It has been found that the need for this factor arises if the effect of the diffusion mechanism in controlling the majority carriers transport is ignored in preference to thermionic emission mechanism. In general, S<1, and its values of less than unity show that the current transport across the potential barrier is essentially limited by the diffusion mechanism.

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