Metal-silicon interfaces and multiple scattering in their low-energy electron diffractions
- 15 January 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (2) , 919-924
- https://doi.org/10.1103/physrevb.33.919
Abstract
After carefully analyzing many interesting experimental phenomena observed with low-energy electron diffraction (LEED) in a series of recent studies on early stages of the formation of many metal-silicon interfaces (Ta/Si, V/Si, Ni/Si, Pd/Si, Pt/Si, Ag/Si, Al/Si), we conclude that all these interfaces, which are defined here as being directly connected to the silicon, have a unique atomic structure—common interfacial phase, and that this structure produces only kinematic LEED intensity spectra.This publication has 33 references indexed in Scilit:
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