Luminescence of Mbe SimGen Strained Monolayer Superlattices
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Electronic structure of Ge/Si monolayer strained-layer superlatticesPhysical Review B, 1989
- Photoluminescence from Defects in Silicon Grown by Molecular Beam EpitaxyMaterials Science Forum, 1989
- Electronic properties of the (100) (Si)/(Ge) strained-layer superlatticesPhysical Review B, 1988
- Strained Si/Ge superlattices: Structural stability, growth, and electronic propertiesPhysical Review B, 1988
- Origin of the optical transitions in ordered Si/Ge(001) superlatticesPhysical Review B, 1988
- Structural and electronic properties of epitaxial thin-layersuperlatticesPhysical Review B, 1988
- Theory of optical transitions in Si/Ge(001) strained-layer superlatticesPhysical Review B, 1987
- Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)Physical Review B, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Photoluminescence studies of silicon molecular beam epitaxy layersJournal of Vacuum Science & Technology B, 1985