Selective manipulation of InAs quantum dot electronic states using a lateral potential confinement layer
- 28 October 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (18) , 3473-3475
- https://doi.org/10.1063/1.1517710
Abstract
To further the objective of controlled manipulation of the electronic states in epitaxial island quantum dots(QDs), we introduce the notion of a lateral potential confinement layer (LPCL) whose judicious placement during island capping allows selective impact on ground and excited electron and hole states. The energy states of InAs/In 0.15 Ga 0.85 As QDs are manipulated using 10-monolayer-thick In 0.15 Al 0.25 Ga 0.60 As LPCLs positioned at the bottom, upper, and top region of the QDs. The changes in the photoluminescence(PL) and PL excitation spectra reveal the nature of the electronic transitions impacted selectively through the spatial charge distributions of the states involved.Keywords
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