THE ANDERSON TRANSITION IN SILICON INVERSION LAYERS

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Abstract
Carriers in inversion layers show a well defined Anderson transition with a minimum metallic conductivity at the mobility edge of about 3 × 10-5 S. Deep in the band tail, the density of localized states falls exponentially. The tunnelling exponent of the localized state wavefunctions (deduced from observations of variable-range hopping) depends on energy as (Ec - E)s where s rises from 0.5 deep in the tail of localized states to 1.0 as (Ee - E) → 0. When the total density of localized states is high, correlation effects become important as EF → Ec with the result that Ec rises as the concentration of carriers is increased. Experiments with substrate bias support the assertion that, when long range potential fluctuations dominante, the inversion layer becomes inhomogeneous and ceases to show an ideal Anderson transition

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