Characterization of the Dual E‐Beam Technique for Recrystallizing Polysilicon Films

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Abstract
Detailed materials properties of silicon on insulator films produced by dual electron‐beam recrystallization of polysilicon films are reported. By scanning a line electron beam parallel to the edges of an array of narrow seeding windows, large areas (several square centimeters) of precisely oriented single‐crystal silicon have been formed. The optimum beam conditions and substrate geometry to achieve the best recrystallization have been investigated, and it has been found that using a fast scan speed (∼ 35 cm/s) allows seeded regrowth without melting the substrate below the isolating oxide. Using these conditions, complete wafers may be recrystallized in around 30s without introducing strain or wafer warping. Remaining crystallographic defects include dislocations midway between seeding windows and an occasional twinning of the regrowth when the windows are aligned along .

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