TEMPERATURE DEPENDENCE OF THE ELECTRON DRIFT MOBILITY IN HYDROGENATED a-Si PREPARED BY SPUTTERING
- 1 October 1981
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 42 (C4) , C4-155
- https://doi.org/10.1051/jphyscol:1981431
Abstract
The temperature dependence of the electron drift mobility and its dispersion have been measured in sputtered a-SiHx films with different H contents. The data are consistent with the multiple trapping model of dispersive transport and demonstrate that the electron transport is insensitive to H content in the 14-19.5% rangeKeywords
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