A 20 dBm Linear RF Power Amplifier Using Stacked Silicon-on-Sapphire MOSFETs
- 4 December 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 16 (12) , 684-686
- https://doi.org/10.1109/lmwc.2006.885634
Abstract
In this letter, a fully integrated 20-dBm RF power amplifier (PA) is presented using 0.25-mum-gate silicon-on-sapphire metal-oxide-semiconductor field-effect transistors (MOSFETs). To overcome the low breakdown voltage limit of MOSFETs, a stacked FET structure is employed, where transistors are connected in series so that each output voltage swing is added in phase. By using triple-stacked FETs, the optimum load impedance for a 20-dBm PA increases to 50Omega, which is nine times higher than that of parallel FET topology for the same output power. Measurement of a single-stage linear PA shows small-signal gain of 17.1 dB and saturated output power of 21.0dBm with power added efficiency (PAE) of 44.0% at 1.88 GHz. With an IS-95 code division multiple access modulated signal, the PA shows an average output power of 16.3 dBm and PAE of 18.7% with adjacent channel power ratio below -42dBcKeywords
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