Depth profile of the microhardness in helium implanted GaP
- 1 December 1987
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (12) , 1493-1496
- https://doi.org/10.1002/crat.2170221211
Abstract
Depth profiles of the damage density and the microhardness are measured in GaP single crystals implanted with 1 MeV helium ions. From an analysis of the experimental data it follows that the microhardness increases up to a damage density of about 16% due to point defect hardening. At higher damage densities the microhardness decreases rapidly, probably due to the formation of extended defects.Keywords
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