The Theory of the Faraday Effect in Anisotropic Semiconductors II: Application to n-type Germanium
- 1 January 1963
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 81 (1) , 90-103
- https://doi.org/10.1088/0370-1328/81/1/315
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Note on the Faraday Effect in Anisotropic SemiconductorsProceedings of the Physical Society, 1962
- The Theory of the Faraday Effect in Anisotropic SemiconductorsProceedings of the Physical Society, 1962
- Cyclotron resonance measurements of the energy band parameters of germaniumJournal of Physics and Chemistry of Solids, 1961
- The Faraday Effect in Non-degenerate SemiconductorsProceedings of the Physical Society, 1961
- Microwave Faraday Effect in Silicon and GermaniumPhysical Review B, 1960
- The Faraday effect in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Theory of Mobility of Electrons in SolidsPublished by Elsevier ,1957
- Cyclotron Resonance of Electrons and Holes in Silicon and Germanium CrystalsPhysical Review B, 1955
- Theory of the Galvanomagnetic Effects in GermaniumPhysical Review B, 1954
- Electrical Properties of-Type GermaniumPhysical Review B, 1954