Hot electron scattering processes in metal films and at metal-semiconductor interfaces
- 13 September 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 71 (11) , 1760-1763
- https://doi.org/10.1103/physrevlett.71.1760
Abstract
Ballistic electron emission spectroscopy is used to investigate current attenuations in thin films of Pd/Si, from which the elastic and inelastic mean free paths are uniquely determined. The observed equality of transmission across Pd/Si(100) and Si(111) interfaces is attributed to interface scattering, on the basis of which a current transport model is developed that gives unprecedented agreement with experiment over a wide energy range.This publication has 15 references indexed in Scilit:
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