Laser-assisted chemical vapor deposition of InN on Si(100)

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Abstract
Laser-assisted chemical vapor deposition of InN on Si(100) using HN3 and trimethyl indium (TMIn) with and without 308-nm photon excitation has been studied with x-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and scanning electron microscopy (SEM). Without 308-nm excimer laser irradiation, no InN film was built on the surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0±0.1 and a thickness of more than 20 Å (the limit of the electron escaping depth for the In 3d x-ray photoelectrons) were formed at temperatures of 300–700 K. The He ii UP spectra taken from these InN films agree well with the result of a pseudopotential calculation for the InN valence band. Our XPS measurements indicate a three-dimensional (3D) island growth of InN on Si(100) at 700 K, which is confirmed by the SEM images. Although the SEM images taken from the same samples with 2000 × magnification showed very smooth InN films, InN islands of about 100 nm in diameter could be clearly observed with a magnification of ≥20 000×. In contrast, the InN film grown at 300 K showed valleys of uncovered substrate instead of InN islands. These uncovered substrate areas, corresponding to about 5% of the surface exposed to the probing x-ray radiation, probably result from incomplete decomposition of In–C bonds and poor diffusion kinetics at this temperature. Above 800 K, dissociation and desorption of In- and N- containing species occurred and thus no InN film was formed on the surface.

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