A design basis for junction transistor oscillator circuits
- 1 June 1958
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 46 (6) , 1271-1280
- https://doi.org/10.1109/jrproc.1958.286956
Abstract
A unified approach to the design of junction transistor oscillators is presented, based on a study of the dynamic admittance presented to the load at the oscillation frequency by a bilateral active four-pole network with passive feedback. The method, applicable to practical oscillator arrangements, leads to simple design expressions when appropriately simplified transistor parameters are used. The equivalent circuit used is suitable for transistors operating by drift and/or diffusion of minority carriers in the base region. Oscillation to the highest possible frequencies, or with the highest possible load, is achieved with optimized feedback networks; for practical transistor oscillators, these are found to be easily designable in terms of the transistor parameters h11 and ¿. An expression for the maximum frequency of oscillation, fm, valid for transistors operating by drift and/or diffusion, leads to new methods for the measurement of certain high-frequency transistor parameters.Keywords
This publication has 5 references indexed in Scilit:
- Instability in Two-Port Active NetworksIRE Transactions on Circuit Theory, 1958
- An investigation of the current gain of transistors at frequencies up to 105 Mc/sProceedings of the IEE - Part B: Radio and Electronic Engineering, 1958
- Stability and Power Gain of Tuned Transistor AmplifiersProceedings of the IRE, 1957
- An approximation to alpha of a junction transistorIRE Transactions on Electron Devices, 1956
- Power Gain in Feedback AmplifierTransactions of the IRE Professional Group on Circuit Theory, 1954