500-GHz characterization of an optoelectronic S-parameter test structure
- 1 April 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 4 (4) , 118-120
- https://doi.org/10.1109/75.282578
Abstract
We propose a compact, high-bandwidth optoelectronic S-parameter test structure and characterize its performance via electrooptic sampling over a 500-GHz frequency range. The test structure is shown to be well-behaved over a 300-GHz bandwidth, with further improvement potential. Active devices can be wirebonded into the structure for characterization, or they can be integrated on-wafer for improved performance.Keywords
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