Fabrication of HfSiON gate dielectrics by plasma oxidation and nitridation, optimized for 65 nm mode low power CMOS applications

2 March 2004

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 17-18
https://doi.org/10.1109/vlsit.2003.1221064

Abstract

Fabrication process of HfSiON gate dielectrics by plasma oxidation of CVD Hf silicate followed by plasma nitridation was developed. Thanks to the high quality ultrathin interfacial layer formed by internal plasma oxidation, electron mobility of 240 cm/sup 2//Vs@0.8 MV/cm (85% of SiO/sub 2/) and hole mobility of 73 cm/sup 2//Vs@0.5 MV/cm (93% of SiON) were successfully achieved. The developed process will be promising for the production of low power CMOS devices in the near future.

Keywords

FABRICATION
DIELECTRICS
PLASMA APPLICATIONS
OXIDATION
HAFNIUM
NITROGEN
PLASMA PROPERTIES
PLASMA MATERIALS PROCESSING
PLASMA STABILITY
CMOS PROCESS

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