Low frequency noise in p + -GaAs resistors
- 19 August 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (17) , 1571-1573
- https://doi.org/10.1049/el:19931047
Abstract
The noise behaviour of p+-GaAs transmission line models (TLMs) associated with the technology of heterojunction bipolar transistors is presented. Devices of different lengths all exhibit excess noise composed of 1/f and generation-recombination (GR) noise. Noise spectra are studied as a function of different bias and different sample lengths. Contact noise is shown to be negligible. Values of the Hooge parameter α are extracted.Keywords
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