Growth of InAs on GaAs (001) by migration-enhanced epitaxy
- 1 October 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1285, 116-122
- https://doi.org/10.1117/12.20813
Abstract
Growth of InAs epitaxial layers on GaAs (001 ) by migration-enhanced epitaxy (MEE) and molecular beam epitaxy (MBE) has been studied. Reflection high-energy-electron diffraction (RHEED) patterns were studied, and persistent RHEED intensity oscillations were observed during MEE growth of InAs. The dependence of RHEED oscillation on MEE growth parameters is discussed. InAs layers grown by MEE at low substrate temperature exhibit comparable quality as MBE layers grown at higher substrate temperature.Keywords
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