Turn-key, liquid-nitrogen-cooled 3.9 µm semiconductorlaser package with 0.2 W CW output
- 5 December 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (25) , 2359-2360
- https://doi.org/10.1049/el:19961556
Abstract
A CW 3.9 µm diode-pumped InAsSb/GaSb laser yielded 0.2 W at 84 K and 0.26 W at ~68 K in a collimated beam, limited only by the pump power. The beam exhibited 62% coupling efficiency into a 250 µm core, 0.2 NA infrared fibre.Keywords
This publication has 7 references indexed in Scilit:
- High CW power (>200 mW/facet) at 3.4 µmfrom InAsSb/InAlAsSb strained quantum well diode lasersElectronics Letters, 1996
- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperatureApplied Physics Letters, 1996
- Type II mid-infrared quantum well lasersApplied Physics Letters, 1996
- High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 μmApplied Physics Letters, 1996
- High-power diode-pumped mid-infrared semiconductor lasersPublished by SPIE-Intl Soc Optical Eng ,1995
- Demonstration of 3.5 µm Ga 1-
x
In
x
Sb/InAssuperlattice diodelaserElectronics Letters, 1995
- Diode-laser-pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4-W average powerApplied Physics Letters, 1993