Precipitation in star sapphire III. Chemical effects accompanying precipitation
- 27 September 1980
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine A
- Vol. 42 (3) , 417-432
- https://doi.org/10.1080/01418618008239367
Abstract
Large prismatic dislocation loops, of interstitial character and with 1/3 〈1011〉 Burgers vectors are observed to lie on basal planes in the sapphire matrix around rutile needle precipitates in star sapphire. The loops climb away from the precipitate-matrix interface during ageing, and contain the material that has ‘plated out’ during precipitation. This plating out of material is necessary because the rutile lattice is less densely packed than that of sapphire. The area of these climbed-out loops depends on the nature of the charge-compensating defect that accompanies dissolution of aliovalent Ti4+ in sapphire; our results suggest that this defect is the oxygen interstitial rather than the aluminium vacancy.Keywords
This publication has 7 references indexed in Scilit:
- Precipitation in star sapphire II. Elastic accommodation of the precipitatePhilosophical Magazine A, 1980
- Precipitation in star sapphire I. Identification of the precipitatePhilosophical Magazine A, 1980
- Optical and ESR studies of hole centers in γ-irradiated Al2O3Physica Status Solidi (a), 1977
- Solid solution hardening of sapphire (α-Al2O3)Physica Status Solidi (a), 1977
- On grain boundary dislocations and ledgesActa Metallurgica, 1973
- The loss of coherency of precipitates and the generation of dislocationsPhilosophical Magazine, 1970
- The TiO2 phase explored by the lattice constant and density methodActa Crystallographica, 1961