Neutron Fluence and Electric Field Strength Dependencies of the Rate of Volume Damage Introduction in Silicon P-N Junctions
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 16 (6) , 43-52
- https://doi.org/10.1109/tns.1969.4325504
Abstract
The anamolous behavior of neutron-induced defect clusters in the high field space-charge region of silicon p-n junctions is investigated. The space-charge region recombination current variation with neutron fluence and the junction electric field strength present during irradiation is examined and an electric field strength dependence for the defect clusters is found to exist. The space-charge region rate of volume damage introduction is observed to be a function of both neutron fluence and the junction electric field strength present during irradiation. An empirical expresion for the dependence of the rate of volume damage introduction on fluence and junction field strength present during irradiation is developed. Possible mechanisms for the observed field dependence are discussed.Keywords
This publication has 7 references indexed in Scilit:
- Neutron Radiation Damage in Silicon TransistorsIEEE Transactions on Nuclear Science, 1968
- An Automatic Data Acquisition System for Semiconductor Device TestingIEEE Transactions on Instrumentation and Measurement, 1968
- Recombination Statistics for Neutron Bombarded Silicon TransistorsIEEE Transactions on Nuclear Science, 1968
- Radiation and Annealing Characteristics of Neutron Bombarded Silicon TransistorsIEEE Transactions on Nuclear Science, 1968
- Injection Dependence of Transient Annealing in Neutron-Irradiated Silicon DevicesIEEE Transactions on Nuclear Science, 1967
- Annealing Characteristics of Neutron Irradiated Silicon TransistorsIEEE Transactions on Nuclear Science, 1967
- A Study of the Neutron-Induced Base Current Component in Silicon TransistorsIEEE Transactions on Nuclear Science, 1965