Reactive sticking of As4 during molecular beam homoepitaxy of GaAs, AlAs, and InAs

• 1 January 1992
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology A
• Vol. 10  (1) , 33-45
• https://doi.org/10.1116/1.578147

Abstract

Keywords

• STEADY STATE
• GALLIUM ARSENIDE
• ARSENIC
• SURFACE RECONSTRUCTION
• MASS SPECTROSCOPY
• MOLECULAR BEAM EPITAXY