Cadmium-doped indium-phosphide light-emitting diode
- 19 October 1972
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 8 (21) , 520-521
- https://doi.org/10.1049/el:19720379
Abstract
Indium-phosphide light-emitting diodes have been prepared by liquid epitaxy with only one run and only one added dopant (cadmium). The diode-power efficiency was 0.07% at 300 K.Keywords
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