Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium
- 20 May 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 32 (20) , 1120-1123
- https://doi.org/10.1103/physrevlett.32.1120
Abstract
An ellipsometer has been used with picosecond pulses to measure the time evolution of optically generated plasmas in intrinsic Ge. By measuring the change in optical ellipticity of a weak probe beam following the absorption of an intense excitation pulse, the time evolution of the plasma density can be determined with a precision of a few picoseconds. At a density of 1.7 × , the ambipolar diffusivity of the plasma was observed to be a factor of 3 greater than the low-density value, consistent with a simple theoretical model of diffusion in the degenerate regime.
Keywords
This publication has 11 references indexed in Scilit:
- Laser probing of carrier diffusion dynamicsJournal of Applied Physics, 1974
- Excess Carriers Induced in Indium Antimonide with a Carbon-Dioxide LaserPhysical Review B, 1973
- Millimeter-Wave Determination of Photoinjected Free-Carrier Concentrations in Highly Excited GaAsPhysical Review B, 1973
- The dielectric constant and plasma frequency of p-type Ge like semiconductorsSolid State Communications, 1972
- Observation of Reflected Light Harmonics at the Boundary of Piezoelectric CrystalsPhysical Review Letters, 1963
- Optical Constants of Germanium in the Region 1 to 10 evPhysical Review B, 1959
- Properties of Silicon and Germanium: IIProceedings of the IRE, 1958
- Optical Constants of Germanium: 3600 A to 7000 APhysical Review B, 1958
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955
- Properties of Silicon and GermaniumProceedings of the IRE, 1952